p-Type Ultrawide-Band-Gap Spinel ZnGa2O4 : New Perspectives for Energy Electronics

Ekaterine Chikoidze (1) , Corinne Sartel (1) , Ismail Madaci , Hagar Mohamed , Christèle Vilar (1) , Belén Ballesteros (2) , Francisco Belarre , Elena del Corro , Pablo Vales-Castro , Guillaume Sauthier , Lijie Li , Mike Jennings , Vincent Sallet (1) , Yves Dumont (1) , Amador Pérez-Tomás (3)

1 GEMAC - Groupe d'Etude de la Matière Condensée
2 ICN2 - ICN2 - Institut Catala de Nanociencia i Nanotecnologia
3 CNM - Centro Nacional de Microelectronica [Spain]

Mots clés: Ultra-wide Bandgap Semiconductor; Spinel Oxides; ZnGa2O4; p-type Conductivity

Domaines: Matière Condensée [cond-mat]; Science des matériaux [cond-mat.mtrl-sci]

Ekaterine Chikoidze, Corinne Sartel, Ismail Madaci, Hagar Mohamed, Christèle Vilar, et al.. p-Type Ultrawide-Band-Gap Spinel ZnGa2O4 : New Perspectives for Energy Electronics. Crystal Growth & Design, 2020, 20 (4), pp.2535-2546. ⟨10.1021/acs.cgd.9b01669⟩. ⟨hal-02615181⟩